GSG 664 - Gate-Stress-Generator

  • Manual testing during production and quality assurance.
  • Integration into an automated system via serial interface.
  • For research into the behavioural characteristics of power semiconductors during development.
GSG 664 - Gate-Stress-Generator__/products/27638__bild.jpg

    Merkmale

    • Test voltage adjustable from 5 up to 75 V
    • Pulse duration adjustable in a range from 10 µs to 100 ms ± 1 µs
    • Rise and fall times adjustable from 5 to 50 µs
    • Output voltage 80 V
Kontaktanfrage
AnwendungsgebieteLaborProduktionQualitätssicherungGateleckstrom, Gatestress, QG

The Gate stress generator GSG 664 is used to stress power semiconductors, especially IGBTs, by a selection pulse.

Therefore the Gate of the DUT is loaded by voltage pulses. The test voltage is adjustable in a range from 5.0 to 75.0 V.

The pulse duration can be adjusted in a range from 10 to 100 µs, the rise time and fall time in a range from 5 to 50 µs.

The instrument offers a serial interface that allows remote control. Manual operation is locked as soon as the serial interface control is used.

The test results are indicated on the front displays and are also available at the serial interface.

Configuring the system via serial interface the transmitted default values are indicated and used for measurement.

The generation of the voltage pulses is monitored. If the pulse can be generated due to the given parameters the LED “PULSE” will be lighted. If the pulse can’t be generated the LED “FAILURE” will be lighted.

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