LCM 625 - Leckstrommessgerät

  • Measurement of Gate leakage current especially of power semiconductors with high Gate capacities
  • Manually testing of MOS-transistors and IGBTs in development, production and quality assurance
  • Integration in an automatical process via serial interface
LCM 625 - Leckstrommessgerät__/products/27699__bild.jpg

    Merkmale

    • Measuring ranges:

    10 µA / 1 µA / 100 nA / 10 nA

    20 nA / 200 nA / 2 µA / 20 µA

    200 µA / 2 mA / 10 mA

    • Adjustable measuring duration 100 ... 5 s
    • Adjustable testing voltage -30 … +30 V
    • Resolution 0.01 nA
    • Manual and remote control via serial interface
Kontaktanfrage
AnwendungsgebieteLaborProduktionQualitätssicherungGateleckstrom, Gatestress, QG

The measuring device for leakage currents LCM 625 is used for measuring the gate leakage currents of MOS-transistors and IGBTs during production (series measurement).

Due to accelerate the measurement the gate capacity (range 100 nF) is connected to GND by a low-impedance MOS-switch until the test voltage is reached. Then the leakage current is measured.

The leakage current is indicated on a display.

After the measurement has been finished the last measured value is displayed and transferred on request.

The testing voltage is adjustable within a range from 30.0 up to +30.0 V.

The measuring duration covers a range from 100 ms up to 5 s.

An additional display indicates both of the testing parameters.

The measurement can be started manually or via integrated serial interface.

Furthermore a data acquisition software is available for documentation of test lots and statistical evaluation.

Haben Sie Fragen zu uns, unseren Produkten oder zu individuellen Lösungen? Kontaktieren Sie uns!